Seagate Nytro 5000 Endurance Optimised Secure SED 1.6TB M.2 PCIe NVMe XP1600HE30012
Overview :
The Seagate® Nytro® 5000 NVMe solid state drive (SSD) represents the next generation of enterprise SSDs. Engineered for low power, high performance and increased storage density in data centers, Nytro 5000 SSD eliminates performance bottlenecks and significantly improves quality of service (QoS).
Overcome Data Bottlenecks and Improve QoS
Nytro 5000 NVMe SSD is highly optimized for read-intensive and mixed workloads.
Incorporating the PCIe Gen3 ×4 interface with the NVMe protocol, Nytro 5000 SSD features four times the bandwidth of SATA SSDs, removing data bottlenecks by delivering blistering throughput and IOPS.
Nytro 5000 SSD also features sideband management for monitoring the health of the SSDs without introducing latency or disrupting overall throughput.
Increase Storage Density and Efficiency in Data Centers
The low-power Nytro 5000 SSD is offered in an ultra-small M.2 form factor, enabling more computing while using minimal space, energy and cost. Delivering the best performance in the smallest power envelope, Nytro 5000 SSD is also extremely scalable and spaceoptimized to reduce TCO.
Enhance Enterprise Reliability, Data Protection and Security
By leveraging Seagate’s existing enterprise expertise and manufacturing excellence, Nytro 5000 SSD delivers the highest levels of data integrity, data security and endurance for critical business applications.
Nytro 5000 SSD includes features for end-to-end data protection, LDPC error correction and Seagate RAISE technology for solid reliability and endurance. With power-loss data protection, the Nytro 5000 SSD helps maintain data integrity in the event of unexpected power interruptions. Seagate Secure™ Self-Encrypting Drive (SED) models support the TCG protocol to help companies keep valuable data secure.
Specification :
| Capacity | 1.6TB |
| Standard Model | XP1600HE30002 |
| Seagate Secure™ SED Model | XP1600HE30012 |
| Features | |
| Interface | PCIe Gen3 x4 (NVMe) |
| NAND Flash Type | 3D cMLC |
| Form Factor | M.2 22110 |
| Performance | |
| Sequential Read (MB/s) Sustained, 128KB | 2,000 |
| Sequential Write (MB/s) Sustained, 128KB | 1,200 |
| Random Read (IOPS) Sustained, 4KB QD64 | 2,45,000 |
| Random Write (IOPS) Sustained, 4KB QD64 | 67,000 |
| Random 70R/30W (IOPS) Sustained, 4KB QD64 | 1,43,000 |
| Endurance/Reliability | |
| Lifetime Endurance (Drive Writes per Day) | 1.5 |
| Nonrecoverable Read Errors per Bits Read | 1 per 10E16 |
| Mean Time Between Failures (MTBF, hours) | 20,00,000 |
| Limited Warranty (years) | 5 |
| Power Management | |
| +12V Max Power (W) | 8.25 |
| Average Read/Write Power (W) | 7 |
| Physical | |
| Component Max Height, Top (mm) | 2 |
| Component Max Height, Bottom (mm) | 1.5 |
| Width (mm) | 22 |
| Length (mm) | 110 |
| Weight (g) | 14 |
| Carton Unit Quantity | 10 |
| Cartons per Pallet/Cartons per Layer | 56/8 |
